Understanding Photovoltaic Cell Dynamic Resistance Behavior with
Changing Incident Light Intensity - draftv1
Abstract
A theoretical examination of the general behavior that should be
expected to be displayed by the magnitude of the dynamic resistance of a
conventional illuminated photovoltaic device within the power-generating
quadrant of its I-V characteristics, when measured in
quasi-static conditions from the short-circuit point to the open-circuit
point, at various incident illumination intensities. The analysis is
based on assuming that the photovoltaic device in question may be
adequately described by a simple conventional d-c lumped-element
single-diode equivalent circuit solar cell model, which includes
significant constant series and shunt resistive losses, but lacks any
other secondary effects. Using explicit analytic expressions for the
dynamic resistance, we elucidate how its magnitude changes as a function
of the terminal variables, the incident illumination intensity and the
model’s equivalent circuit elements’ parameters.