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A Versatile 200-V Capacitor-Coupled Level Shifter for Fully Floating Multi-MHz Gate Drivers

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posted on 2021-02-24, 08:24 authored by Van Ha NguyenVan Ha Nguyen
This brief presents a novel level-shifter circuit for high-frequency high-voltage (HV) gate-drives. The proposed level shifter (LS) is designed based on a capacitive-coupler/current mirror/ latch structure which helps to extend operation voltage of a floating supply into the negative range, achieves sub-ns and constant delay, and consumes very low power from the floating supply. Additionally, common-mode noise cancellers based on a cross-current mirror and transmission gates are also presented to enhance the dV/dt immunity of the LS against slewing of the floating ground. Implemented in 0.18 µm HV BCD-on-SOI (bipolar-CMOS-DMOS on silicon-on-isolator) process, the post-layout simulation of the proposed design shows a delay of 680 ps, 200 V/ns of dVSSF/dt slew rate immunity, It dissipates no static power and only 8.1 pJ/transition from the floating supply, improving FoM1 and FoM2 of the proposed LS by 3 times and 11.7 times compared to respective state-of-the-art works.


This work was supported in part by the Natural Sciences and Engineering Research Council of Canada (NSERC).


Email Address of Submitting Author

Submitting Author's Institution

École de technologie supérieure (ETS), University of Québec

Submitting Author's Country

  • Canada