Active Temperature compensation for MEMS capacitive sensor

Temperature variation is one of the most crucial factors that need to be cancelled in MEMS sensors. Many traditional methodologies require an additional circuit to compensate for temperature. This work describes a new active temperature compensation method for MEMS capacitive strain sensor without any additional circuit. The proposed method is based on a complement 2-D capacitive structure design. It consumes zero-power, which is essential toward the realization of a low-power temperature-compensated sensor in battery-powered or energy-harvesting applications