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Airy function based model for 2-DEG charge and surface potential in N-polar Gallium Nitride heterostructures

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posted on 19.03.2022, 13:09 authored by Anuja MenokeyAnuja Menokey, Arvind Ajoy
A systematic, analytical method to obtain the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. This method also provides the wave functions, sub-band energies, and band diagram. The model accounts for the greater leakage of the wave functions into the spacer and barrier layers in the N-polar structure as compared to the Ga-polar structure. The framework is based on the solution of Schrodinger-Poisson equations for an approximately triangular well potential with finite confinement, achieved using first-order perturbation theory. No fitting parameters are used. Results obtained using our model are in good agreement with numerical results (obtained using the finite difference method) for a wide range of bias conditions.

History

Email Address of Submitting Author

121704001@smail.iitpkd.ac.in

ORCID of Submitting Author

Anuja Menokey

Submitting Author's Institution

IIT palakkad

Submitting Author's Country

India