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Analytical Modelling of Dielectric Modulated Negative Capacitance MoS2-FET for Biosensor Application
preprint
posted on 2021-08-05, 15:38 authored by Deepak Kumar Panda, Rajan Singh, Trupti LenkaTrupti Lenka, Vishal Goyal, Nour El I Boukortt, Hieu NguyenIn this paper, a dielectric modulated negative
capacitance (NC)-MoS2 field effect transistor (FET)-based biosensor
is proposed for label-free detection of biomolecules such as enzymes, proteins,
DNA, etc. Various reports present experimental demonstration and modelling of
NC-MoS2 FET, but it is never utilized as a dielectric modulated
biosensor. Therefore, in this work, the modelling, characterization and
sensitivity analysis of dielectric modulated NC-MoS2 FET is focussed.
For immobilization of biomolecules, a nanocavity is formed below the gate by
etching some portion of the gate oxide material. The immobilization of
biomolecules in the cavity leads to a variation of different electrostatic
properties such as surface potential, threshold voltage, drain current, and
subthreshold-swing (SS) which can be utilized as sensing parameters. An
analytical model for the proposed biosensor is also developed in the
subthreshold region by considering the properties of two-dimensional (2D)
ferroelectric materials and benchmarked with TCAD device simulations. The
effect of change of gate length and doping concentration on different
electrical properties is also analysed to estimate the optimum value of channel
doping. The results prove that the proposed device can be used for
next-generation low power label-free biosensor which shows enhanced sensitivity
as compared to traditional FET-based biosensors.
History
Email Address of Submitting Author
trlenka@ieee.orgORCID of Submitting Author
0000-0002-8002-3901Submitting Author's Institution
National Institute of Technology Silchar, AssamSubmitting Author's Country
- India