Band structure-based simulation and modeling of UTSOI MOSFETs
UTSOI MOS devices enable the scaling of the channel length of MOS Transistors through scaling of the channel thickness and oxide thickness. Additionally, as they have a planar architecture similar to the conventional Bulk MOSFETs, these UTSOI MOSFETs have a simpler fabrication process compared to 3-D Transistors like FinFETs. Also, their performance can be efficiently tuned by applying a bias through the BOX. This allows a significant dynamic modulation of the speed/power trade-off, which is a powerful knob at the circuit level.
Email Address of Submitting Authornalin20@iiserb.ac.in
Submitting Author's InstitutionIISER Bhopal
Submitting Author's Country