Research_Proposal_UTSOI (2).pdf (1.68 MB)

Band structure-based simulation and modeling of UTSOI MOSFETs

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posted on 2023-09-01, 19:13 authored by Nalin Vilochan MishraNalin Vilochan Mishra, Aditya S Medury

UTSOI MOS devices enable the scaling of the channel length of MOS Transistors through scaling of the channel thickness and oxide thickness. Additionally, as they have a planar architecture similar to the conventional Bulk MOSFETs, these UTSOI MOSFETs have a simpler fabrication process compared to 3-D Transistors like FinFETs. Also, their performance can be efficiently tuned by applying a bias through the BOX. This allows a significant dynamic modulation of the speed/power trade-off, which is a powerful knob at the circuit level.


Email Address of Submitting Author

Submitting Author's Institution

IISER Bhopal

Submitting Author's Country

  • India

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