Compact Modeling and SPICE Simulation of GCMO-Based Resistive Switching Devices
This work reports a compact behavioral model for the hysteretic conduction characteristics of Al/Gd0.1Ca0.9MnO3(GCMO)/Au resistive switching devices suitable for SPICE simulations. The devices are nonvolatile, forming-less, compliance-free, and self-rectifying multistate memristive structures which makes them of maximum interest for neuromorphic computing and memory applications. The proposed model relies on two coupled equations, one for the electron transport and a second one for the vacancy displacement. The proposed model considers a novel approach for solving the internal state of the device based on the so-called generalized quasi-static hysteron whose application can be extended to other structures and dynamics in addition to the ones discussed here.
Ministerio de Ciencia e Innovación, Spain (TEC2017-84321-C4-4-R)
Academy of Finland (Project 308285)
Email Address of Submitting Authorenrique.email@example.com
ORCID of Submitting Author0000-0003-0470-5318
Submitting Author's InstitutionUniversitat Autonoma de Barcelona
Submitting Author's Country