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Direct white noise characterization of short-channel MOSFETs

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posted on 05.12.2020, 20:31 by Kenji Ohmori, Shuhei Amakawa
On-wafer evaluation of white thermal and shot noise in nanoscale MOSFETs is demonstrated by directly sensing the drain current under zero- and nonzsero-drain-bias (Vd) conditions for the first time, without recourse to a hot noise source, commonly needed in noise figure measurement. The dependence of white noise intensity on the drain bias clearly shows thermal noise at Vd=0 V and shot noise at Vd>0 V with its gate-bias-dependent suppression. An empirical expression for the Fano factor (shot-noise suppression factor) that is well-behaved even at Vd=0V exactly and suitable for measurement-based evaluation is proposed. The direct measurement approach could allow more accurate and predictive noise modeling of RF MOSFETs than has conventionally been possible.

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Email Address of Submitting Author

ohmori@devicelab.co.jp

ORCID of Submitting Author

0000-0002-5312

Submitting Author's Institution

Device Lab Inc.

Submitting Author's Country

Japan

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