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Displacement damage in Hydrogenated Amorphous Silicon p-i-n diodes and charge selective contacts detectors.

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posted on 18.04.2022, 02:46 authored by Mauro MenichelliMauro Menichelli, Marco Bizzarri, Maurizio Boscardin, Lucio Calcagnile, Mirco Caprai, Anna Paola Caricato, Giuseppe Antonio Pablo, Michele Crivellari, Ilaria Cupparo, Giacomo Cuttone, Sylvain Dunand, Livio Fanò, Benedetta Gianfelici, Omar Hammad, Maria Movileanu-Ionica, keida kanxheri, Matthew Large, Giuseppe Maruccio, Anna Grazia Monteduro, Francesco Moscatelli, Arianna Morozzi, Andrea Papi, Daniele Passeri, Maddalena Pedio, Marco Petasecca, Giada Petringa, Francesca Peverini, Gianluca Quarta, Silvia Rizzato, Alessandro Rossi, giulia rossi, Andrea Scorzoni, Leonello Servoli, Cinzia Talamonti, Giovanni Verzellesi, Nicolas Wyrsch

Hydrogenated amorphous silicon is a well known detector material for its radiation resistance. This study concern 10 µm thickness, p-i-n and charge selective contacts planar diode detectors which were irradiated with neutrons at two fluence values: 1016 neq/cm2 and 5 x 1016 neq/cm2. In order to evaluate their radiation resistance, detector leakage current and response to X-ray photons have been measured. The effect of annealing for performance recovery at 100°C for 12 and 24 hours has also been studied. The results for the 1016 neq/cm2 irradiation show a factor 2 increase in leakage current that is completely recovered after annealing for p-i-n devices while charge selective contacts devices show an overall decrease of the leakage current at the end of the annealing process compared to the measurement before the irradiation. X-ray dosimetric sensitivity degrades, for this fluence, at the end of irradiation but partially recovers for charge selective contacts devices and increases for p-i-n devices at the end of the annealing process. Concerning the 5 x 1016 neq/cm2 irradiation test (for p-i-n structures only), due to the activation occurred during the irradiation phase, the results were taken after 146 days of storage around 0° C when a self-annealing effect may have occurred. Nevertheless the results shows a degradation in leakage current and x-ray sensitivity which changes very little after annealing.

Funding

3D-SiAm

History

Email Address of Submitting Author

mauro.menichelli@pg.infn.it

ORCID of Submitting Author

https://orcid.org/0000-0002-9004-735X

Submitting Author's Institution

INFN Sez, di Perugia

Submitting Author's Country

Italy