Extraction of Mobility and Threshold Voltage from Noisy Current-Voltage Data

A simple, four-parameter formula is proposed and used to smooth noisy transistors  curves for the purpose of stable extraction of transistor field-effect mobility and threshold voltage.  The proposed smoothing shape function is found to work for  data obtained for short and long transistors, low and high drain voltage, and for TFTs, ET-SOI, and Trigate MOSFETs