TechRxiv
2022020740.pdf (1.88 MB)
Download file

First Demonstration of Low-Power Vertically Stacked One Time Programmable Multi-bit IGZO-Based BEOL Compatible Ferroelectric TFT Memory Devices with Lifelong Retention for Monolithic 3D-Inference Engine Applications

Download (1.88 MB)
preprint
posted on 04.04.2022, 09:50 by Sourav DeSourav De
This paper reports back-end-of-line (BEOL) (process temperature <350°C) compatible vertically stacked indium gallium zinc oxide (IGZO) based multi-bit one-time programmable (OTP) ferroelectric (Fe) thin film transistor (TFT) memory devices with lifelong retention capability for the first time. Further we have evaluated the performance of the IGZO-based OTP Fe-TFT as synaptic devices for monolithic 3D (M3D) inference engine. System level simulation revealed inference accuracy of 97% for MNIST data in MLP neural network with maximum accuracy loss of 1.5% over a period of 10 years without re-training. The proposed M3D inference engine also showed superior energy efficiency and cell area of 95.33 TOPS/W (binary) and 8𝐹2 respectively.

Funding

This work is funded by ECSEL Joint Undertaking project ANDANTE, under grant number 876925

History

Email Address of Submitting Author

sourav.de@ipms.fraunhofer.de

Submitting Author's Institution

Fraunhofer IPMS

Submitting Author's Country

Germany

Usage metrics

Licence

Exports