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Gallium arsenide buffer amplifier

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posted on 15.12.2021, 07:35 authored by Vladislav ChumakovVladislav Chumakov, Pakhomov Ilya, Klejmenkin D.V., Kunts Alexey
The circuitry of a buffer amplifier (BA) implemented on gallium arsenide n-channel field-effect transistors with a control p-n junction and gallium arsenide bipolar p-n-p transistors is considered. The results of computer simulation of the amplitude characteristics of the BA in the LTspice environment are presented. The proposed circuit solutions are recommended for use in RC filters of the Sallen Key family

Funding

Grant of the Russian Science Foundation (project No. 18-79-10109-P)

History

Email Address of Submitting Author

chumakov.dssa@mail.ru

ORCID of Submitting Author

0000-0002-3446-743X

Submitting Author's Institution

Don State Technical University, Rostov-on-Don, Russia

Submitting Author's Country

Russian Federation