High-Efficiency CMOS Charge Pump for Ultra-Low Power RF Energy Harvesting Applications
This paper explicates the design and implementation of a switch capacitor DC-DC converter system for Radio Frequency (RF) energy harvesting applications for an input voltage in the sub-150mV range, using 180-nm CMOS triple-well BCD technology. The proposed system incorporates a charge pump architecture that employs an improvised Dynamic Gate Biasing (DGB), Forward and Reverse Body Bias technique (FRBB), along with a time axis symmetrical clocking scheme implemented using an advanced bootstrapped CMOS driver to enhance the overall drive capability of the system at low input voltages. Post-layout extracted simulations demonstrate that the proposed system achieves higher overall efficiency, delivering a peak Power Conversion Efficiency (PCE) of 85.8% at 125mV input voltage, outperforming other state-of-the-art architectures in similar voltage ranges. Moreover, the proposed system exhibits reliable operation even at input voltages as low as 85mV, while maintaining good overall efficiency.
Email Address of Submitting Authorsaichandrateja@greenpmusemi.com
ORCID of Submitting Author0000-0002-4433-7858
Submitting Author's InstitutionGreen PMU Semi Private Limited
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