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Preprint. High Sensitive, Linear and Thermostable Pressure Sensor Utilizing Bipolar Junction Transistor for 5 kPa.pdf (765.02 kB)
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High Sensitive, Linear and Thermostable Pressure Sensor Utilizing Bipolar Junction Transistor for 5 kPa

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posted on 06.07.2021, 17:41 by Mikhail BasovMikhail Basov
Research of pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) piezosensitive differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa differential range was done. The significant advantages of developed chip PDA-NFL in the comparative analysis of advanced pressure sensor analogs, which are using the Wheatstone piezoresistive bridge, are clearly shown. The experimental results prove that pressure sensor chip PDA-NFL with 4.0x4.0 mm2 chip area has sensitivity S = 11.2 ± 1.8 mV/V/kPa with nonlinearity of 2KNLback = 0.11 ± 0.09 %/FS (pressure is applied from the back chip side) and 2KNLtop = 0.18 ± 0.09 %/FS (pressure is applied from the top chip side). All temperature characteristics have low errors, because the precision elements balance of PDA-NFL electric circuit was used. Additionally, the burst pressure is 80 times higher than the working range.

History

Email Address of Submitting Author

engineerbasovm@gmail.com

ORCID of Submitting Author

0000-0003-0798-4500

Submitting Author's Institution

Dukhov Automatics Research Institute (VNIIA)

Submitting Author's Country

Russian Federation