Preprint. High Sensitive, Linear and Thermostable Pressure Sensor Utilizing Bipolar Junction Transistor for 5 kPa.pdf (765.02 kB)
High Sensitive, Linear and Thermostable Pressure Sensor Utilizing Bipolar Junction Transistor for 5 kPa
Research
of pressure sensor chip utilizing novel electrical circuit with
bipolar-junction transistor-based (BJT) piezosensitive differential amplifier
with negative feedback loop (PDA-NFL) for 5 kPa differential range was done.
The significant advantages of developed chip PDA-NFL in the comparative
analysis of advanced pressure sensor analogs, which are using the Wheatstone
piezoresistive bridge, are clearly shown. The experimental results prove that
pressure sensor chip PDA-NFL with 4.0x4.0 mm2 chip area has
sensitivity S = 11.2 ± 1.8 mV/V/kPa with nonlinearity of 2KNLback =
0.11 ± 0.09 %/FS (pressure is applied from the back chip side) and 2KNLtop
= 0.18 ± 0.09 %/FS (pressure is applied from the top chip side). All temperature
characteristics have low errors, because the precision elements balance of
PDA-NFL electric circuit was used. Additionally, the burst pressure is 80 times
higher than the working range.
History
Email Address of Submitting Author
engineerbasovm@gmail.comORCID of Submitting Author
0000-0003-0798-4500Submitting Author's Institution
Dukhov Automatics Research Institute (VNIIA)Submitting Author's Country
- Russian Federation