Investigation into MoTe2 based Dielectric Modulated AMFET Biosensor for Label-free detection of DNA including electric variational effects

Due to limitations of Silicon, Transition metal dichalcogenides (TMD) based biosensors are popular in the recent times. In TMD family, Molybdenum telluride (MoTe2) is being studied a lot for different biosensing application. However, for DNA detection using TMD based DMFET, the effect of the electrical variations in DNA has not been studied before. Also, the impact of DNA-Electrode interaction on transducer level of DMFET is yet to be studied. In this article, we have proposed a Molybdenum telluride (MoTe2) based Accumulation Mode Field Effect Transistor (AMFET) for possible dielectric modulated biosensing application. The study is focused on DNA detection including the electric variations of DNA due to surface interaction. We have done a circuit level analysis of the proposed structure for having deeper insights into its performance under various DNA orientations in the nanogap. We have also presented a benchmarking to highlight the superior sensitivity of the proposed structure (∆V_th = 700mV at K = 8). The impact of back-gate bias is also included. We have obtained significant variation of threshold voltage shift for different orientation in the proposed structure suggesting strong impact of electrical variations in DNA in biosensing performance of MoTe₂ AMFET.