Memristive State Equation for Bipolar Resistive Switching Devices Based on a Dynamic Balance Model and its Equivalent Circuit Representation
preprintposted on 2019-12-20, 12:17 authored by Enrique MirandaEnrique Miranda, Jordi Suñé
A memory state equation consistent with several experimental observations is presented and discussed within the framework of Chua's memristive systems theory. The proposed equation describes the evolution of the memory state corresponding to a bipolar resistive switching device subjected to a variety of electrical stimulus.
Spanish Ministry of Science and Universities TEC2017-84321-C4-4-R
Email Address of Submitting Authorenrique.firstname.lastname@example.org
ORCID of Submitting Author0000-0003-0470-5318
Submitting Author's InstitutionUniversitat Autònoma de Barcelona
Submitting Author's Country