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Memristive State Equation for Bipolar Resistive Switching Devices Based on a Dynamic Balance Model and its Equivalent Circuit Representation

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posted on 20.12.2019 by Enrique Miranda, Jordi Suñé
A memory state equation consistent with several experimental observations is presented and discussed within the framework of Chua's memristive systems theory. The proposed equation describes the evolution of the memory state corresponding to a bipolar resistive switching device subjected to a variety of electrical stimulus.

Funding

Spanish Ministry of Science and Universities TEC2017-84321-C4-4-R

History

Email Address of Submitting Author

enrique.miranda@uab.cat

ORCID of Submitting Author

0000-0003-0470-5318

Submitting Author's Institution

Universitat Autònoma de Barcelona

Submitting Author's Country

Spain

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