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Memristive State Equation for Bipolar Resistive Switching Devices Based on a Dynamic Balance Model and its Equivalent Circuit Representation
  • Enrique Miranda ,
  • Jordi Suñé
Enrique Miranda
Universitat Autònoma de Barcelona

Corresponding Author:[email protected]

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Jordi Suñé
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Abstract

A memory state equation consistent with several experimental observations is presented and discussed within the framework of Chua's memristive systems theory. The proposed equation describes the evolution of the memory state corresponding to a bipolar resistive switching device subjected to a variety of electrical stimulus.
2020Published in IEEE Transactions on Nanotechnology volume 19 on pages 837-840. 10.1109/TNANO.2020.3039391