TechRxiv
IEEE INV LYR SHORT#1Rx.pdf (523.43 kB)
Download file

Physical Origins of Universal Mobility in MOSFET Inversion Layers: Conservation Laws

Download (523.43 kB)
preprint
posted on 29.12.2021, 03:43 by F. ShoucairF. Shoucair
The salient properties of charge flow (or current) along the MOSFET’s inversion layer are shown to be consilient with a river’s flow in a gravitational potential field, insofar as both are fundamentally governed by energy conservation principles, and their laminar and turbulent conditions determined by friction losses at shallow depths. We establish analytically that the low-field, "universal" effective mobility, μeff , long reported to vary as ~(E*T)-1/3 for transversal fields below 0.5 MV/cm, is manifestation and consequence of both energy and momentum conservation under laminar flow conditions and quantum mechanical effects, in which case the inversion layer’s mean thickness also varies as ~(E*T)-1/3 up to a maximum value E*T ≈ 0.35 MV/cm at 300K, determined only by interface "terrain" amplitude and fundamental constants.

History

Email Address of Submitting Author

zeropi@copper.net

ORCID of Submitting Author

0000 0002 7280 314X

Submitting Author's Institution

BPL

Submitting Author's Country

United States of America