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Pressure Sensor with New Electrical Circuit Utilizing Bipolar Junction Transistor.pdf (532.88 kB)
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Pressure Sensor with Novel Electrical Circuit Utilizing Bipolar Junction Transistor

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posted on 15.12.2021, 14:36 authored by Mikhail BasovMikhail Basov

High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.

History

Email Address of Submitting Author

engineerbasovm@gmail.com

ORCID of Submitting Author

0000-0003-0798-4500

Submitting Author's Institution

Dukhov Automatics Research Institute

Submitting Author's Country

Russian Federation