Pressure Sensor with New Electrical Circuit Utilizing Bipolar Junction Transistor.pdf (532.88 kB)
Download filePressure Sensor with Novel Electrical Circuit Utilizing Bipolar Junction Transistor
High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.
History
Email Address of Submitting Author
engineerbasovm@gmail.comORCID of Submitting Author
0000-0003-0798-4500Submitting Author's Institution
Dukhov Automatics Research InstituteSubmitting Author's Country
- Russian Federation
Usage metrics
Keywords
Bipolar Junction Transistorssensorssensor model analysispiezoresistivepressure sensordifferential amplifierAmplifierresistor circuit modelsiliconMembrane area strainMEMS structureMEMS displacement sensorMEMS device surfacesensor measurementstechnology developerspressure applicationelectricalElectrical circuitcircuit optimizationFeedback LoopsTemperature characteristicstemperature errornonlinearity function