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Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic, Wide-Band-Gap, and High-Voltage Applications

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posted on 2022-11-21, 13:34 authored by Zlatan StanojevicZlatan Stanojevic, Jose Maria Gonzalez Medina, Franz Schanovsky, Markus Karner

In this preprint we present a novel approach to solving the transport problem in semiconductors.  We reformulate the drift-diffusion equations in terms of the quasi-Fermi-energies as solution variables; a drastic increase in numerical stability is achieved, which permits the simulation of devices at cryogenic temperatures as well as wide-band-gap devices using double precision arithmetic, instead of extended precision arithmetic which would otherwise be required to solve these applications using regular drift-diffusion.

History

Email Address of Submitting Author

z.stanojevic@globaltcad.com

ORCID of Submitting Author

0000-0003-3286-6346

Submitting Author's Institution

Global TCAD Solutions GmbH

Submitting Author's Country

  • Austria