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Reliability Model for DR FLASH Memories2rows ver2.docx (5 MB)

Reliability Model For Data Retention In FLASH Memories

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preprint
posted on 28.07.2020 by Zaci Cohen
New reliability model for prediction of data retention in Flash memories, that taking into account cell type, workin temerature, endurance, tunnel width all togther.
The model is accurate, simple and easy to use.

History

Email Address of Submitting Author

zacicohen@gmail.com

ORCID of Submitting Author

ZC

Submitting Author's Institution

Technion

Submitting Author's Country

Israel

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