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Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications

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posted on 2022-08-29, 13:20 authored by Sourav DeSourav De, Maximilian Lederer, Yannick Raffel, Franz Müller, Konrad Seidel, Thomas Kaempfe

CMOS compatibility and the low process temperature of hafnium oxide(HfO2) make HfO2-based ferroelectric FETs an excellent candidate for logic, memory, and neuromorphic devices. This article discusses the challenges and opportunities of using hafnium oxide-basedferroelectric memory for in-memory-computing applications. Finally, we try to draw the roadmap for them. 


European Union’s ECSEL Joint Undertaking through Project TEMPO under Grant 826655

ECSEL Joint Undertaking Project ANDANTE


Email Address of Submitting Author

Submitting Author's Institution

Fraunhofer-Institut für Photonische Mikrosysteme IPMS - Center Nanoelectronic Technologies

Submitting Author's Country

  • Germany

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