Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications
CMOS compatibility and the low process temperature of hafnium oxide(HfO2) make HfO2-based ferroelectric FETs an excellent candidate for logic, memory, and neuromorphic devices. This article discusses the challenges and opportunities of using hafnium oxide-basedferroelectric memory for in-memory-computing applications. Finally, we try to draw the roadmap for them.
European Union’s ECSEL Joint Undertaking through Project TEMPO under Grant 826655
ECSEL Joint Undertaking Project ANDANTE
Email Address of Submitting Authorsourav.email@example.com
Submitting Author's InstitutionFraunhofer-Institut für Photonische Mikrosysteme IPMS - Center Nanoelectronic Technologies
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