FeFET_review_arxiv.pdf (10.72 MB)

Roadmap of Ferroelectric Memories: From Discovery to 3D Integration

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posted on 2023-06-28, 03:50 authored by Sourav DeSourav De, Maximilian Lederer, Yannick Raffel, Franz Müller, David Lehninger, Ayse Sunbul, stefan duenkel, Tarek Ali, Halid Mulaosmanovic, Aftab Baig, Bhaswar ChakrabartiBhaswar Chakrabarti, sven beyer, Tian-Li Wu, Johannes Mueller, Darsen D. Lu, Konrad Seidel, Thomas Kaempfe

The versatility of hafnium oxide-based ferroelectric memories to function as a storage class memory, a synaptic device for neuromorphic implementation, and a device capable of high-density integration have made them attractive candidates for next-generation technology. Ferroelectric memories have been increasingly popular with the discovery of ferroelectricity in hafnium oxide at a shallow thickness and compatibility with complementary metal-oxide-semiconductor-compatible processes. The single transistor-based ferroelectric cell makes them ideal for non-volatile embedded memory solutions, bridging the gap between on-chip SRAM and external data storage (e.g. Flash). This paper begins with discovering ferroelectricity in Rochelle salt and discusses the neoteric progress up to successful integration with 3D memory.


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Submitting Author's Institution

Fraunhofer-Institut für Photonische Mikrosysteme IPMS - Center Nanoelectronic Technologies (CNT)

Submitting Author's Country

  • Germany

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