Roadmap of Ferroelectric Memories: From Discovery to 3D Integration
The versatility of hafnium oxide-based ferroelectric memories to function as a storage class memory, a synaptic device for neuromorphic implementation, and a device capable of high-density integration have made them attractive candidates for next-generation technology. Ferroelectric memories have been increasingly popular with the discovery of ferroelectricity in hafnium oxide at a shallow thickness and compatibility with complementary metal-oxide-semiconductor-compatible processes. The single transistor-based ferroelectric cell makes them ideal for non-volatile embedded memory solutions, bridging the gap between on-chip SRAM and external data storage (e.g. Flash). This paper begins with discovering ferroelectricity in Rochelle salt and discusses the neoteric progress up to successful integration with 3D memory.
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Submitting Author's InstitutionFraunhofer-Institut für Photonische Mikrosysteme IPMS - Center Nanoelectronic Technologies (CNT)
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