Preprint. Schottky diode temperature sensor for pressure sensor.pdf (617.2 kB)
Download fileSchottky diode temperature sensor for pressure sensor
The small silicon chip of
Schottky diode (0.8x0.8x0.4 mm3) with planar arrangement of
electrodes (chip PSD) as temperature sensor, which functions under the
operating conditions of pressure sensor, was developed. The forward I-V characteristic
of chip PSD is determined by potential barrier between Mo and n-Si (ND
= 3 × 1015 cm-3). Forward voltage UF = 208 ± 6
mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity kT
<0.4% for temperature range of -65 to +85 ⁰C) at supply current IF
= 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage UBR
> 85 V and low leakage current IL < 5 μA at 25 ⁰C and IL < 130 μA at 85 ⁰C (UR = 20 V) because chip PSD
contains the structure of two p-type guard rings along the anode perimeter. The
application of PSD chip for wider temperature range from -65 to +115 ⁰C is
proved. The separate chip PSD of temperature sensor located at a distance of
less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data
for temperature compensation of pressure sensor errors by ASIC and for direct
temperature measurement.
History
Email Address of Submitting Author
engineerbasovm@gmail.comORCID of Submitting Author
0000-0003-0798-4500Submitting Author's Institution
Dukhov Automatics Research Institute (VNIIA)Submitting Author's Country
- Russian Federation