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T-Gate shaped AlN/β-Ga2O3 HEMT for RF and High Power Nanoelectronics

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posted on 02.08.2021, 14:29 by Rajan Singh, Trupti LenkaTrupti Lenka, Hieu Nguyen
In this paper, we report record DC and RF performance in β-Ga2O3 High Electron Mobility Transistor (HEMT) with field-plate T-gate using 2-D simulations. The T gate with head-length LHL of 180 nm and foot-length LFL of 120 nm is used in the highly scaled device with an aspect ratio (LG/tbarrier) of ~ 5. The proposed device takes advantage of a highly polarized Aluminum Nitride (AlN) barrier layer to achieve high Two-Dimensional Electron Gas (2DEG) density in the order of 2.3 × 1013 cm-2, due to spontaneous as well as piezoelectric polarization components. In the depletion mode operation, maximum drain current ID,MAX of 1.32 A/mm, and relatively flat transconductance characteristics with a maximum value of 0.32 S/mm are measured. The device with source-drain distance LSD of 1.9 µm exhibits record low specific-on resistance RON,sp of 0.136 mΩ-cm–2, and off-state breakdown voltage of 403 V, which correspond to the record power figure-of-merit (PFoM) of ~ 1194 MW/cm2. Additionally, current gain cut-off frequency fT and maximum oscillation frequency fMAX of 48 and 142 GHz are estimated. The obtained results show the potential of Ga2O3 HEMT for futuristic power devices.

Funding

Visvesvaraya Young Faculty Research Fellowship by Ministry of Electronics and Information Technology (MeitY), Govt. of India.

History

Email Address of Submitting Author

trlenka@ieee.org

ORCID of Submitting Author

0000-0002-8002-3901

Submitting Author's Institution

National Institute of Technology Silchar

Submitting Author's Country

India