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The boron-oxygen (BiOi) defect complex induced by irradiation with 23 GeV protons in p-type epitaxial silicon diodes
  • chuan liao
chuan liao
university of hamburg

Corresponding Author:[email protected]

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Peer review status:Published

Mar 2022Published in IEEE Transactions on Nuclear Science volume 69 issue 3 on pages 576-586. 10.1109/TNS.2022.3148030