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The boron-oxygen (BiOi) defect complex induced by irradiation with 23 GeV protons in p-type epitaxial silicon diodes

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posted on 13.09.2021, 15:57 by chuan liaochuan liao
Boron removal effect

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Email Address of Submitting Author

chuan.liao@desy.de

Submitting Author's Institution

university of hamburg

Submitting Author's Country

Germany

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