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The boron-oxygen (BiOi) defect complex induced by irradiation with 23 GeV protons in p-type epitaxial silicon diodes

preprint

posted on 2021-09-13, 15:57 authored by chuan liaochuan liao

Boron removal effect

History

Email Address of Submitting Author

chuan.liao@desy.de

Submitting Author's Institution

university of hamburg

Submitting Author's Country

Germany

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The boron-oxygen (BiOi) defect complex induced by irradiation with 23 GeV protons in p-type epitaxial silicon diodes

Categories

Nuclear Engineering

Keywords

Radiation damage displacement damage

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