Vertical_High_k_RESURF_Trench_SBD_Pt_contact.pdf (5.9 MB)

Ultra-Low Reverse Leakage in Large Area Kilo-Volt class β-Ga2O3 Trench Schottky Barrier Diode with High-k Dielectric RESURF

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posted on 2023-09-14, 18:42 authored by Saurav RoySaurav Roy

We present our findings on the utilization of a high permittivity dielectric, RESURF, in β-Ga2O3 trench Schottky barrier diodes. Our research demonstrates the achievement of ultra-low reverse leakage current in both small -scale and large-scale devices, with a breakdown voltage exceeding 1kV, thanks to the high-k RESURF technology. Furthermore, we assess the switching performance of these large-area devices and illustrate their competitive standing when compared to state-of-the-art commercial SiC devices. Additionally, we provide evidence of the superior thermal stability exhibited by high-k trench devices in comparison to SiC devices.


II-VI Foundation Block Gift Program

Air Force Office of Scientific Research


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University of California Santa Barbara

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  • United States of America