Variable-Temperature Broadband Noise Characterization of MOSFETs for Cryogenic Electronics: From Room Temperature down to 3 K
A broadband noise measurement system is newly developed and demonstrated at temperatures between 3 K and 300 K. Using the system, wideband noise spectroscopy (WBNS) from 20 kHz to 500 MHz is carried out for the first time, revealing that shot noise is the dominant white noise down to 3 K. The paper also suggests, by means of WBNS, the possibility of extracting the baseline noise characteristics, which do not include the noise component that varies a great deal from device to device.
Email Address of Submitting Authorohmori@devicelab.co.jp
ORCID of Submitting Author0000-0002-5312-319X
Submitting Author's InstitutionDevice Lab Inc.
Submitting Author's Country