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EDTM2021_v02b_PID6683991.pdf (902.04 kB)

White Noise Characterization of N-MOSFETs for Physics-Based Cryogenic Device Modeling

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posted on 07.01.2021, 12:33 by Kenji OhmoriKenji Ohmori, Shuhei Amakawa

We propose a methodology of variable-temperature broadband noise characterization for cryogenic MOSFETs. A DUT is mounted on a reusable PCB vehicle with a built-in low-noise amplifier, and loaded into a cryogenic chamber. Using the vehicle, we measured flicker (low frequency) and white noise, and have successfully revealed dominance of shot noise in the temperature range from 300 to 120 K for the first time.

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Email Address of Submitting Author

ohmori@devicelab.co.jp

ORCID of Submitting Author

0000-0002-5312

Submitting Author's Institution

Device Lab Inc.

Submitting Author's Country

Japan

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