White Noise Characterization of N-MOSFETs for Physics-Based Cryogenic Device Modeling
preprintposted on 2021-01-07, 12:33 authored by Kenji OhmoriKenji Ohmori, Shuhei Amakawa
We propose a methodology of variable-temperature broadband noise characterization for cryogenic MOSFETs. A DUT is mounted on a reusable PCB vehicle with a built-in low-noise amplifier, and loaded into a cryogenic chamber. Using the vehicle, we measured flicker (low frequency) and white noise, and have successfully revealed dominance of shot noise in the temperature range from 300 to 120 K for the first time.