TechRxiv

Publications

  • Optical Tolerance Analysis of the Multi-Beam Limb Viewing Instrument STEAMR
  • Millimeter-wave sensor based on a lambda/2-line resonator for identification and dielectric characterization of non-ionic surfactants.
  • A Tunable 240–290 GHz Waveguide Enclosed 2-D Grid HBV Frequency Tripler
  • New Associate Editor
  • Editorial—Incoming EiC
  • An Accurate Empirical Model Based on Volterra Series for FET Power Detectors
  • A 30-GHz Integrated Subharmonic Mixer Based on a Multichannel Graphene FET
  • Antenna-Integrated 0.6 THz FET Direct Detectors Based on CVD Graphene
  • Molecular Spectroscopy With a Compact 557-GHz Heterodyne Receiver
  • A 474 GHz HBV Frequency Quintupler Integrated on a 20 mu m Thick Silicon Substrate
  • Thermal Characterization of THz Schottky Diodes Using Transient Current Measurements
  • Graphene-Si Schottky IR Detector
  • Integrated 200-240-GHz FMCW Radar Transceiver Module
  • Sensitivity Analysis of TRL Calibration in Waveguide Integrated Membrane Circuits
  • Single-Flange 2-Port TRL Calibration for Accurate THz S-Parameter Measurements of Waveguide Integrated Circuits
  • Development of a 557 GHz GaAs monolithic membrane-diode mixer
  • High Efficiency and Broad-Band Operation of Monolithically Integrated W-Band HBV Frequency Tripler
  • Microwave characterization of Ti/Au-graphene contacts
  • Silicon Integrated InGaAs/InAlAs/AlAs HBV Frequency Tripler
  • Analytical Extraction of a Schottky Diode Model From Broadband S-Parameters
  • Terahertz radiation induces non-thermal structural changes associated with Fröhlich condensation in a protein crystal
  • Microwave noise characterization of graphene field effect transistors
  • Status and Prospects of High-Power Heterostructure Barrier Varactor Frequency Multipliers
  • Comparison of Full 3D and Unit Cell Models for Waveguide-Embedded Frequency Multiplier Arrays
  • Feasibility of Ambient RF Energy Harvesting for Self-Sustainable M2M Communications Using Transparent and Flexible Graphene Antennas
  • A 185–215-GHz Subharmonic Resistive Graphene FET Integrated Mixer on Silicon
  • A Compact 128-Element Schottky Diode Grid Frequency Doubler Generating 0.25 W of Output Power at 183 GHz
  • A flexible graphene terahertz detector
  • Effect of ferroelectric substrate on carrier mobility in graphene field-effect transistors
  • Charge carrier velocity in graphene field-effect transistors
  • Guest Editorial: Mini-Special Issue on the 30th International Symposium on Space Terahertz Technology (ISSTT 2019)
  • Low noise 874 GHz receivers for the International Submillimetre Airborne Radiometer (ISMAR)
  • Graphene FET on Diamond for High-Frequency Electronics
  • Editorial Outgoing EiC
  • Wide-field off-axis telescope for the Mesospheric Airglow/Aerosol Tomography Spectroscopy satellite
  • Graphene Field-Effect Transistors With High Extrinsic ${f}_{T}$ and ${f}_{\mathrm{max}}$
  • Effects of Self-Heating on ${f}_{\text{T}}$ and ${f}_{\text{max}}$ Performance of Graphene Field-Effect Transistors
  • Describing Broadband Terahertz Response of Graphene FET Detectors by a Classical Model
  • A 200 GHz CVD graphene FET based resistive subharmonic mixer
  • Optimization of THz graphene FET detector integrated with a bowtie antenna
  • Compact 340 GHz homodyne transceiver modules for FMWC imaging radar arrays
  • Non-destructive density measurements of pharmaceutical products by THz imaging
  • Characterization of Al2O3 gate dielectric for graphene electronics on flexible substrates
  • THz smooth-walled spline horn antennas: Design, manufacturing and measurements
  • A Linear-Array of 300-GHz Antenna Integrated GFET Detectors on a Flexible Substrate
  • On-Chip Characterization of High-Loss Liquids Between 750 and 1100 GHz
  • Enhanced High-Frequency Performance of Top-Gated Graphene FETs Due to Substrate- Induced Improvements in Charge Carrier Saturation Velocity
  • Mobility Degradation and Series Resistance in Graphene Field-Effect Transistors
  • Terahertz Rectennas on Flexible Substrates Based on One-Dimensional Metal–Insulator–Graphene Diodes
  • Integrated 10-GHz Graphene FET Amplifier
  • A Large-Signal Graphene FET Model
  • Monolithic HBV-Based 282-GHz Tripler With 31-mW Output Power
  • 10 dB small-signal graphene FET amplifier
  • A Broadband, Low Noise, Integrated 340 GHz Schottky Diode Receiver
  • A Subharmonic Graphene FET Mixer
  • Vertically Illuminated TW-UTC Photodiodes for Terahertz Generation
  • A Room Temperature Bolometer for Terahertz Coherent and Incoherent Detection
  • Impact of Eddy Currents and Crowding Effects on High-Frequency Losses in Planar Schottky Diodes
  • Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics
  • Terahertz Direct Detection in YBa2Cu3O7 Microbolometers
  • THz to test Jupiter's moons
  • Study of IF Bandwidth of MgB Phonon-Cooled Hot-Electron Bolometer Mixers
  • A 340 GHz CW non-linear imaging system
  • A monolithic 280 GHz HBV frequency tripler
  • Analysis of the High Frequency Spreading Resistance for Surface Channel Planar Schottky Diodes
  • Terahertz GaAs Schottky diode mixer and multiplier MIC's based on e-beam technology
  • Influence of waveguide width errors on TRL and LRL calibrations
  • A Broadband Heterostructure Barrier Varactor Tripler Source
  • An experimental 210 GHz radar system for 3D stand-off detection
  • Clinical diagnostics and Treatment with Electromagnetic Fields
  • Development of Integrated Submillimeter Wave Diodes for Sources and Detectors
  • VNA-Calibration and S-Parameter Characterization of Submillimeter Wave Integrated Membrane Circuits
  • Modeling of GaAs Schottky Diodes for Terahertz Application
  • Heterostructure Barrier Varactor Quintuplers for Terahertz Applications
  • Catadioptric Dielectric Lens for Imaging Applications
  • Development of high power HBV multipliers for millimeter wave applications - art. no. 67390U
  • Millimeter Wave Characterization of a Catadioptric Lens for Imaging Applications
  • A novel catadioptric dielectric lens for microwave and terahertz applications
  • A 0.2-W heterostructure barrier varactor frequency tripler at 113 GHz
  • A Large Signal Graphene FET Model (vol 59, pg 968, 2012)
  • A System for THz Imaging of Low-Contrast Targets Using the Born Approximation
  • Resistive Graphene FET Subharmonic Mixers: Noise and Linearity Assessment
  • A Low VSWR 2SB Schottky Receiver
  • InGaAs/InAlAs/AlAs Heterostructure Barrier Varactors on Silicon Substrate
  • CHARACTERIZATION OF UNI-TRAVELING CARRIER PHOTODIODES FOR HIGH-LINEARITY AND HIGH-SNR APPLICATIONS
  • Microwave S-Parameter Characterization of an Antenna-Coupled Catadioptric Lens
  • A 170 GHz 45 degrees Hybrid for Submillimeter Wave Sideband Separating Subharmonic Mixers
  • Hydrodynamic Simulations of unitraveling-carrier photodiodes
  • Transfer of InP-based HBV epitaxy onto borosilicate glass substrate by anodic bonding
  • Vertically illuminated TW-UTC Photodiodes for Terahertz Generation
  • Optimization of the UTC-PD epitaxy for photomixing at 340 GHz
  • Optimum barrier thickness study for the InGaAs/InAlAs/AlAs heterostructure barrier varactor diodes
  • Integrated III-V Heterostructure Barrier Varactor Frequency Tripler on a Silicon Substrate
  • A 340 GHz 2SB Schottky Receiver for the STEAMR Limb Sounder
  • High Power W-band Monolithically Integrated Tripler
  • A 175 GHz HBV Frequency Quintupler With 60 mW Output Power
  • Electro-Thermal Model for Multi-Anode Schottky Diode Multipliers
  • Low noise MgB(2) terahertz hot-electron bolometer mixers
  • High/low-impedance transmission-line and coupled-line filter networks for differential phase shifters
  • Submillimeter Wave S-Parameter Characterization of Integrated Membrane Circuits
  • AN ON-WAFER METHOD FOR C-V CHARACTERIZATION OF HETEROSTRUCTURE DIODES
  • Varactors
  • Heterostructure barrier varactors at submillimetre waves
  • Terahertz generation by multiplication
  • A high-power frequency tripler for 100 GHz
  • High efficiency HBV multipliers
  • Optimisation and design of a suspended subharmonic 340 GHz schottky diode mixer
  • Novel devices for (sub)millimeter-wave space applications
  • An electro-thermal HBV model
  • Design and fabrication of waveguide-coupled CW-photomixers for millimetre-wave and THz applications using low temperature grown GaAs photoconductors
  • High power HBV multipliers for F- and G- band applications
  • A low cost fixed tuned F-band HBV frequency tripler
  • High efficiency HBV multipliers for millimetre wave generation
  • A distributed heterostructure barrier varactor frequency tripler
  • Carrier conduction through the quantum barrier region in a heterostructure barrier varactor induced by an ac bias
  • 11% efficiency 100GHz InP-based heterostructure barrier varactor quintupler
  • Frequency multiplier measurements on heterostructure barrier varactors on a copper substrate
  • High efficiency HBV multipliers for millimeter wave generation
  • Effects of self-heating on planar heterostructure barrier varactor diodes
  • High-frequency capacitance of bipolar resonant tunneling diodes
  • Heterostructure-barrier-varactor design
  • MOVPE strain layers - growth and application
  • A 100-GHz HBV frequency quintupler using microstrip elements
  • Analysis of symmetric varactor frequency multipliers
  • HBV tripler with 21% efficiency at 102 GHz
  • Thermal constraints for heterostructure barrier varactors
  • Fabrication and characterization of InGaAlAs/InP based uni-traveling-carrier photodiodes
  • AlGaAs/GaAs and InAlAs/InGaAs heterostructure barrier varactors
  • Heterostructure barrier varactors on copper substrate
  • Capacitance analysis for AlGaAs/GaAs and InAlAs/InGaAs heterostructure barrier varactor diodes
  • Graphene Field-Effect Transistors With High Extrinsic ${f}_{T}$ and ${f}_{\mathrm{max}}$

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Divya Jayasankar

Divya Jayasankar

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