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Direct white noise characterization of short-channel MOSFETs
  • Kenji Ohmori ,
  • Shuhei Amakawa
Kenji Ohmori
Device Lab Inc., Device Lab Inc.

Corresponding Author:[email protected]

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Shuhei Amakawa
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On-wafer evaluation of white thermal and shot noise in nanoscale MOSFETs is demonstrated by directly sensing the drain current under zero- and nonzsero-drain-bias (Vd) conditions for the first time, without recourse to a hot noise source, commonly needed in noise figure measurement. The dependence of white noise intensity on the drain bias clearly shows thermal noise at Vd=0 V and shot noise at Vd>0 V with its gate-bias-dependent suppression. An empirical expression for the Fano factor (shot-noise suppression factor) that is well-behaved even at Vd=0V exactly and suitable for measurement-based evaluation is proposed. The direct measurement approach could allow more accurate and predictive noise modeling of RF MOSFETs than has conventionally been possible.
Apr 2021Published in IEEE Transactions on Electron Devices volume 68 issue 4 on pages 1478-1482. https://doi.org/10.1109/TED.2021.3059720