In this work, we report that the AFE/FE gate-stack can be utilized to
engineer the S-curve for boosting the ION of NC-FinFET.
By using a short-channel BSIM-CMG compatible AFE/FE stack NC-FinFET
model, the capacitance matching and ON-state performance for AFE/FE
stack NC-FinFETs are investigated. Our study indicates that, the AFE/FE
gate-stack can be used to improve the capacitance matching in strong
inversion at higher gate-bias. Therefore, impressively higher ON-state
current (compared to single-layer) can be achieved. In reality,
source-drain series resistance will make such high IDS impractical. The
more likely strategy is to use lower VDD to achieve much
lower power consumption (and reduced vertical fields). While the
transient NC effect also needs to be carefully investigated, this study
suggests significant long term benefits to VDD scaling
if materials with certain AFE and FE properties are developed and
introduced in IC manufacturing in the future.