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Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier
  • Kenji Ohmori ,
  • Shuhei Amakawa
Kenji Ohmori
Device Lab Inc., Device Lab Inc.

Corresponding Author:[email protected]

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Shuhei Amakawa
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Abstract

Characterization of broadband noise of MOSFETs from room temperature down to 120 K in fine temperature steps is presented. A MOSFET is mounted on a reusable printed circuit board vehicle with a built-in low-noise amplifier, and the vehicle is loaded into a cryogenic chamber. The vehicle allows noise measurement in the frequency range from 50 kHz to 100 MHz. At low frequencies, it enables extraction of activation energies associated with electron trapping sites. At high frequencies, as has been suggested by noise figure measurements, the white noise of MOSFETs is shown to be dominated by the shot noise, which has much weaker temperature dependence than the thermal noise. The shot noise will a problematic noise source in broadband RF CMOS circuits operating at cryogenic temperatures.
2021Published in IEEE Journal of the Electron Devices Society volume 9 on pages 1227-1236. 10.1109/JEDS.2021.3112217