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Broadband Parasitic Modeling of Diodes in the Millimeter-Wave Band
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  • Mario Pérez-Escribano ,
  • Angel Palomares-Caballero,
  • Pablo Padilla,
  • Juan F Valenzuela-Valdés
Mario Pérez-Escribano
Telecommunication Research Institute (TELMA), Universidad de Málaga, E.T.S. Ingeniería de Telecomunicación, 29010 Málaga, Spain

Corresponding Author:[email protected]

Author Profile
Angel Palomares-Caballero
Institut d’Electronique et des Technologies du numéRique (IETR), UMR CNRS 6164, INSA Rennes, 35700 Rennes, France
Pablo Padilla
Department of Signal Theory, Telematics and Communications, Centre for Information and Communication Technologies (CITIC-UGR), University of Granada, 18071 Granada, Spain
Juan F Valenzuela-Valdés
Department of Signal Theory, Telematics and Communications, Centre for Information and Communication Technologies (CITIC-UGR), University of Granada, 18071 Granada, Spain

Abstract

This paper presents the extraction of an equivalent circuit model for PIN diodes and varactors in the millimeter waves. This circuit model is handy for new communication applications involving, for example, electronic beam reconfigurability, where diodes are commonly used. For parameter extraction, the proposed model includes the effects of the device, the pads, and the gap underneath the device. From the measurement at various bias points (varactor) or states (PIN diode), it is possible to extract an equivalent circuit to properly model the behavior of these devices when using them to design reconfigurable elements. The results are validated experimentally, obtaining an excellent agreement between the measurements and the equivalent circuit models in a large frequency band up to 67 GHz.
11 Dec 2023Submitted to TechRxiv
14 Dec 2023Published in TechRxiv