Abstract

This paper presents an analytical method for determining the electron mobility in N-polar GaN het-erostructures. The wave function, charge density, and Fermi potential are obtained analytically by combining Airy functions in the channel and spacer regions and utilizing first-order perturbation theory. Importantly, this approach does not rely on any external input such as charge density or electric field. The analytically obtained wave function, charge density, and Fermi potential are then utilized to estimate the scattering rates resulting from various processes in N-polar MIS-HEMTs. Matthiessen's rule is applied to combine the individual scattering rates. The obtained results are validated against experimentally measured mobilities for both conventional GaN and composite GaN-InGaN het-erostructures over a range of channel layer thicknesses.