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Investigation of p- and n-Type Quantum Dot Arrays Manufactured in 22nm FDSOI CMOS
  • +2
  • Shai Bonen,
  • Suyash Pati Tripathi,
  • Julie McIntosh,
  • Thomas Jager,
  • Sorin P Voinigescu
Shai Bonen

Corresponding Author:[email protected]

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Suyash Pati Tripathi
Julie McIntosh
Thomas Jager
Sorin P Voinigescu

Abstract

Large arrays of 1024 single and 2048 coupled quantum dots (QDs) are characterized at 2-4 K and 300 K for the first time using transport measurements. We demonstrate < 0.2 fA gate leakage current, tunnel current transport through 19 series-connected p-and n-type QDs, 2D-coupling in arrays of 18nm×15nm×6nm QDs with 40nm spacing, back gate selectivity and tuneability of quantum features, and scaling of the gate-voltage difference between Coulomb peaks with increasing gate oxide thickness and decreasing QD size for both p-and n-type structures.
06 Jun 2024Submitted to TechRxiv
07 Jun 2024Published in TechRxiv