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Gallium arsenide buffer amplifier
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  • Vladislav Chumakov ,
  • Pakhomov Ilya ,
  • Klejmenkin D.V. ,
  • Kunts Alexey
Vladislav Chumakov
Don State Technical University

Corresponding Author:[email protected]

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Pakhomov Ilya
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Klejmenkin D.V.
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Kunts Alexey
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Abstract

The circuitry of a buffer amplifier (BA) implemented on gallium arsenide n-channel field-effect transistors with a control p-n junction and gallium arsenide bipolar p-n-p transistors is considered. The results of computer simulation of the amplitude characteristics of the BA in the LTspice environment are presented. The proposed circuit solutions are recommended for use in RC filters of the Sallen Key family