loading page

Compact Modeling and SPICE Simulation of GCMO-Based Resistive Switching Devices
  • +2
  • Enrique Miranda ,
  • Ville Lähteenlahti ,
  • Hannu Huhtinen ,
  • Alejandro Schulman ,
  • Petriina Paturi
Enrique Miranda
Universitat Autonoma de Barcelona

Corresponding Author:[email protected]

Author Profile
Ville Lähteenlahti
Author Profile
Hannu Huhtinen
Author Profile
Alejandro Schulman
Author Profile
Petriina Paturi
Author Profile


This work reports a compact behavioral model for the hysteretic conduction characteristics of Al/Gd0.1Ca0.9MnO3(GCMO)/Au resistive switching devices suitable for SPICE simulations. The devices are nonvolatile, forming-less, compliance-free, and self-rectifying multistate memristive structures which makes them of maximum interest for neuromorphic computing and memory applications. The proposed model relies on two coupled equations, one for the electron transport and a second one for the vacancy displacement. The proposed model considers a novel approach for solving the internal state of the device based on the so-called generalized quasi-static hysteron whose application can be extended to other structures and dynamics in addition to the ones discussed here.
2022Published in IEEE Transactions on Nanotechnology volume 21 on pages 285-288. 10.1109/TNANO.2022.3181500