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  • Saurav Roy
Saurav Roy
University of California Santa Barbara

Corresponding Author:[email protected]

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We report a vertical β-Ga2O3 Schottky Barrier Diode (SBD) with BaTiO3 as field plate oxide on low doped thick epitaxial layer exhibiting 2.1 kV breakdown voltage. A thick drift layer of 11 μm with a low effective doping concentration of 8×1015 cm−3 is used to achieve high breakdown voltage. Using the high-k dielectric with dielectric constant of 248, the breakdown voltage increases from 816V for the non-field-plated SBD to 2152V (>2x improvement) for the field-plated SBD without compromising the on-state performance. The diode dimensions are varied to analyze the effect of edge high-field related leakage with reverse bias and also the effect of current spreading during forward operation. Very uniform distribution of breakdown voltages of 2152V±20V are observed for the diode diameters from 50 μm to 300 μm for the field-plated SBDs. The on and off state power losses are also analyzed and compared with the non-field-plated devices and the switching losses are estimated analytically.
10 Apr 2023Published in Applied Physics Letters volume 122 issue 15. 10.1063/5.0137935