Variable-Temperature Broadband Noise Characterization of MOSFETs for
Cryogenic Electronics: From Room Temperature down to 3 K
Abstract
A broadband noise measurement system is newly developed and demonstrated
at temperatures between 3 K and 300 K. Using the system, wideband noise
spectroscopy (WBNS) from 20 kHz to 500 MHz is carried out for the first
time, revealing that shot noise is the dominant white noise down to 3 K.
The paper also suggests, by means of WBNS, the possibility of extracting
the baseline noise characteristics, which do not include the noise
component that varies a great deal from device to device.