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Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement
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  • Yi Xiao ,
  • Shan Deng ,
  • Zijian Zhao ,
  • Zubair Faris ,
  • Yixin Xu ,
  • Tzu-Jung Huang ,
  • Vijaykrishnan Narayanan ,
  • Kai Ni
Shan Deng
Rochester Institute of Technology

Corresponding Author:[email protected]

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Zijian Zhao
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Zubair Faris
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Tzu-Jung Huang
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Vijaykrishnan Narayanan
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Abstract

In this work, we propose a 2TnC ferroelectric random access memory (FeRAM) cell design to realize the quasi- nondestructive readout (QNRO) of ferroelectric polarization (PFE) in a capacitor, which can relax the endurance requirement of the ferroelectric thin film and exploits the benefits of both FeRAM and ferroelectric FET (FeFET). We demonstrate that: i) QNRO sensing of PFE is conducted successfully in experiment with a ON/OFF ratio (ION/IOFF)>103, ION>10 μA, and read endurance>106 cycles, which can relax the FeRAM endurance requirement by 106x; ii) optimization of the cell performance can be realized by tuning the metal-ferroelectric-metal capacitor (MFM) capacitor to read transistor area ratio and read transistor threshold voltage (V TH); iii) the proposed cell structure is 3D-compatible, enabling integration of highly dense memory solution; iv) the proposed cell structure also enables compute-in-memory (CIM) applications of FeRAM, which has not been widely explored. With this technology, storage and memory-centric computing can be enable
Sep 2023Published in IEEE Electron Device Letters volume 44 issue 9 on pages 1436-1439. 10.1109/LED.2023.3290940