Evaluating the Robustness of Complementary Channel Ferroelectric FETs
Against Total Ionizing Dose Towards Radiation-Tolerant Embedded
Nonvolatile Memory
Abstract
In this work, a thorough assessment of the robustness of complementary
channel HfO2 ferroelectric FET (FeFET) against total ionizing dose (TID)
radiation is conducted, with the goal of determining its suitability for
use as high-performance and energy-efficient embedded nonvolatile memory
(eNVM) for space applications. We demonstrate that: i) ferroelectric
HfO2 thin film is robust against X-ray and proton irradiation; ii) FeFET
exhibits a polarization state dependent radiation sensitivity where the
high-VTH (HVT) state sees noticeable negative VTH shift and low-VTH
(LVT) is immune to irradiation, irrespective of the channel type; iii)
the state dependence is ascribed to the depolarization field in the HVT,
which points toward the channel and facilitates the transport and
trapping of radiation-generated holes close to the channel. In the
future, radiation hardening techniques need to be considered.