Abstract
This work reports the development of a resistive random-access memory
(RRAM) device with Silicon-oxide (SiOx) active switching
material. Metal-oxide based RRAM synaptic devices typically suffer from
high variability and strongly non-linear conductance change. In this
work, we demonstrate a SiOx-based synapse with low
operating voltages, excellent uniformity in the switching operation, and
analog tunability of conductance. The devices also exhibit linear and
symmetric conductance update.
Our investigations reveal that the enhanced uniformity and analog
tunability can be attributed to an interfacial switching mechanism which
can be controlled through careful optimization of the device operating
conditions.