Abstract
Vertical cavity surface emitting lasers (VCSEL) are of great interest
for photonic and telecom applications, however challenges in fabrication
of efficient VSCEL GaN devices are yet to be resolved. In this work we
present a study of micro-photoluminescence (PL) emission from a novel
InGaN quantum well (QW) emitting structure with integrated micro-cavity,
which can be used for VCSEL applications. The micro-cavity exhibiting
Tamm plasmon optical states is formed by porous GaN distributed Bragg
reflector (DBR) bottom mirror and top plasmonic silver metal mirror.
Results of PL, Fourier imaging spectroscopy and finite-difference
time-domain simulations are presented and discussed. An estimated 8.5
times enhancement of QW PL intensity at around 480-500 nm and a
red-shift of QW peak emission is attributed to the Tamm plasmon
resonance in the cavity at around 514 nm.