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Band structure-based simulation and modeling of UTSOI MOSFETs
  • Nalin Vilochan Mishra ,
  • Aditya S Medury
Nalin Vilochan Mishra
IISER Bhopal

Corresponding Author:[email protected]

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Aditya S Medury
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Abstract

UTSOI MOS devices enable the scaling of the channel length of MOS Transistors through scaling of the channel thickness and oxide thickness. Additionally, as they have a planar architecture similar to the conventional Bulk MOSFETs, these UTSOI MOSFETs have a simpler fabrication process compared to 3-D Transistors like FinFETs. Also, their performance can be efficiently tuned by applying a bias through the BOX. This allows a significant dynamic modulation of the speed/power trade-off, which is a powerful knob at the circuit level.