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Band structure-based simulation and analysis of 2D electrostatics in UTB DG MOSFETs from low to room temperature
  • Nalin Vilochan Mishra
Nalin Vilochan Mishra
IISER Bhopal

Corresponding Author:[email protected]

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Abstract

Accurate determination of key device electrostatics parameters such as threshold voltage, Sub-Threshold Swing in Ultra-Thin Body (UTB) MOS transistors is made possible through accurate treatment of Quantum Confinement Effects (QCEs), along the channel thickness direction and Short-Channel Effects (SCEs), along the direction of the channel length. In this work, we propose a methodology to simulate the 2-D channel electrostatics of a UTB Double Gate (DG) MOS transistor structure, at room temperature, by solving the 2-D Poisson’s equation self-consistently with the 1-D band structure, thus enabling this approach to accurately take Quantum Confinement and short channel effects (SCEs) into account. By solving the 1-D band structure only once at the source-channel junction and updating the eigen energy (in the lateral direction) in the self-consistent loop, we show that this approach is able to obtain the 2-D channel electrostatics in a computationally efficient and accurate manner. By also extending this band structure-based approach to lower device temperatures, where carrier freeze-out effects manifest, we show the versatility of this approach in calculating the channel electrostatics over a wide range of device temperatures, while considering QCEs and SCEs.