We report on the demonstration of β-Ga₂O₃ MOSFETs fabricated on 1-inch bulk substrates using metalorganic vapor phase epitaxy (MOVPE) with disilane (Si₂H₆) as the silicon precursor. Sheet charge uniformity of the as-grown films was measured via Hall and ranged from 5.9 - 6.7 × 10¹² cm^-2 with a uniform Hall mobility of 125-129 cm² /V.s across the sample. MOSFET devices with a source-drain width of 5.1 μm were measured across the wafer and had a minimum on-resistance (R_ON) of 47.87 Ω.mm with a maximum on-current (I_ON) of 165mA/mm. For these same devices, the on-current (I_ON) and pinch-off voltage (V_P) uniformity across the wafer were 137±12 mA/mm and -27.3±7.3 V respectively. Devices showed low reverse leakage current until catastrophic breakdown occurred, with measured breakdown voltages (V_BR) of up to 2.15 kV. This work provides valuable insights into understanding the growth, fabrication, and characterization processes for β-Ga₂O₃ FETs on full waferscale substrates. It also projects the promise of developing lateral β-Ga₂O₃ FETs with high current carrying capabilities and breakdown voltages, especially on substrates of 1 inch or larger. Â