Abstract
This letter reports a compact SPICE model for the electron transport
characteristics of Al2O3/HfO2-based nanolaminates for their use in
multilevel one-time programmable (M-OTP) memories. The model comprises
three simulation blocks corresponding to the electrical stimulus applied
to the device, the equivalent circuit of the memory cell, and the events
generator associated with the dielectric breakdown of the insulating
layer. For a clear assessment of the quantum effects occurring in these
structures, constant voltage stress was used as the primary electrical
stimulus. The antifuse (AF) cell is represented by a combination of
series and parallel resistances that account for the formation of
filamentary conducting paths with quantum properties across the
structure. The arrival of successive breakdown events is simulated using
a power-law nonhomogeneous Poisson process.