Abstract

A stochastic compact model for resistive switching devices is presented. The motivation is twofold: first, introducing variability in a natural way, and second, accounting for the discrete jumps of conductance observed during set and reset transitions. The model is based on an event generation rate, and it is an "on-the-fly" procedure because events are randomly generated as the simulation proceeds in time. For the generation of events, we assume a mixed non-homogeneous Poisson process. Before considering resistive switching, we deal with the generation of successive breakdown events in metalinsulator-semiconductor structures. This confirms the validity of the approach by comparing with experimental data in which discrete events are evident. To deal with resistive switching, we transform a previous compact model into a stochastic model. Comparison with experiments in TiN/Ti/HfO2/W devices show the validity of the approach. Current-voltage loops and potentiationdepression transients in pulsed experiments are captured with a single set of parameters. Moreover, the model is an adequate framework to deal with both cycle-to-cycle and device-to-device variability.