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White Noise Characterization of N-MOSFETs for Physics-Based Cryogenic Device Modeling
  • Kenji Ohmori ,
  • Shuhei Amakawa
Kenji Ohmori
Device Lab Inc.

Corresponding Author:[email protected]

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Shuhei Amakawa
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We propose a methodology of variable-temperature broadband noise characterization for cryogenic MOSFETs. A DUT is mounted on a reusable PCB vehicle with a built-in low-noise amplifier, and loaded into a cryogenic chamber. Using the vehicle, we measured flicker (low frequency) and white noise, and have successfully revealed dominance of shot noise in the temperature range from 300 to 120 K for the first time.
08 Apr 2021Published in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). https://doi.org/10.1109/EDTM50988.2021.9420837